| ‘lllvVISHAYQV Www.Vishay.com 100 D 01 instantaneous Forward Current (A) 0.2 0.4 0.6 0.5 1.0 1.2 1.4 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous FonNard Characteristics 10 000 (UA) 100 D 01 instantaneous Reverse Current Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Es1 PB, ES1 PC, Es1 PD Vishay General Semiconductor 100 o Junction Capacitance (pF) 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance 1000 100 Transient Thermal impedance (“C/W) 3 t- Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance PACKAGE ouTLINE DIMENSIONS in inches (millimeters) Do—220AA (SMP) Cathode Band if 4.‘ (4, 0.012 (0.30) REF. l 0.086 (2.18) 0.053 (1.35) 0.036 (0.91) 0.074 (1.88) 0.041 (1.05) 0.024 (0.51)0.142 (3.61) ‘ ‘ 0.103 (2.60) 0.032 (0.80) 0-‘26(3-lg) 0.087 (2.20) a 4’ ‘7 0.015(0.40) 0.158(4.00) 0.146 (3.70)0.025 0.030(0.635) (0.762) 0.105 “? (2.67) 0.013 (0.35) 0004 (010)lCl ? 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) Revision: 30?Oct-13 0.045 (1.15) 0.033 (0.85)7 0.050 (1.27)3 Document Number: 88918 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT wwwvishaycom/doc?91000 |